Samsung and TSMC are joining Intel in adopting ASML's High NA extreme ultraviolet (EUV) lithography machines, alongside a new joint initiative to move to larger 12-inch photomasks, in a bid to boost chip production capacity and yields. The move matters because it signals the world's two largest chipmakers formally committing to next-generation lithography technology that has so far only been used by Intel, potentially easing supply constraints for high-end processors and memory chips in the coming years.

Samsung plans to deploy the High NA EUV technology for DRAM production by 2028, while TSMC aims to use it in advanced node manufacturing from 2030; Intel has already produced over a million wafers using the process on its 18A node. Separately, ASML, TSMC and Samsung are working towards adopting 12-inch photomasks, up from the current six-inch standard, which would eliminate costly "stitching" of chip features and could raise fab productivity by around 40%, according to ASML's chief technology officer; testing is due to begin in 2031 with production from 2033, and SK Hynix is reportedly considering joining the initiative.